6 December 2005 CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202T (2005) https://doi.org/10.1117/12.636018
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm2.
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Baoxue Bo, Baoxue Bo, Xin Gao, Xin Gao, Jing Zhang, Jing Zhang, Hui Li, Hui Li, Yi Qu, Yi Qu, Baolin Zhang, Baolin Zhang, Xiaohong Tang, Xiaohong Tang, } "CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202T (6 December 2005); doi: 10.1117/12.636018; https://doi.org/10.1117/12.636018
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