5 December 2005 A study on the optimal structures of high-power superluminescent diode
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202V (2005) https://doi.org/10.1117/12.635763
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
This paper presents the structure design and fabrication technology of 850nm superluminescent Diodes (SLDs).Various ways have been tried for the suppression of F-P lasing oscillation to realize superluminescence: Tilted-stripe structure, tandem-type structure and non-injection section near the rear facet are introduced. Three structures are also compared and combined with each other. The device not lasing at maximum injection current 200mA is realized. At injection current of 150mA, the maximum output power can be 7.8mW and the device can still work at 100°C.
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Jing Zhang, Yuesu Zhang, Hui Li, Yi Qu, Xin Gao, Baoxue Bo, "A study on the optimal structures of high-power superluminescent diode", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202V (5 December 2005); doi: 10.1117/12.635763; https://doi.org/10.1117/12.635763
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