6 December 2005 Kinetic Monte Carlo simulation of epitaxial growth
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60203A (2005) https://doi.org/10.1117/12.637145
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
In this thesis, the Kinetic Monte Carlo method is applied for the study of epitaxial growth. In order to study the effect of a homogeneous substrate, the lattice is divided into square-shaped domains. From the island morphologies, we can see that the confinement effect are found to have strong dependence on the growth conditions, such as decrease deposition flux F, increase lateral nearest neighbor atom term EN or increase temperature T which can make a more formal substrate. The island size distributions are also be calculated for a detail illumination.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiang Feng, Zhong-yuan Yu, Yu-min Liu, Shi-qi Zheng, "Kinetic Monte Carlo simulation of epitaxial growth", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60203A (6 December 2005); doi: 10.1117/12.637145; https://doi.org/10.1117/12.637145
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