9 December 2005 A nondestructive technique of analyzing chalcogenide phase-change thin films by spectroscopic-ellipsometry
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Proceedings Volume 6024, ICO20: Optical Devices and Instruments; 602415 (2005) https://doi.org/10.1117/12.666848
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
A multiplayer effective-medium (ML-EM) model is proposed to characterize the microstructure of chalcogenide phase-change thin films grown by magnetron sputtering. Spectroscopic ellipsometric (SE) measurements are carried out on the as-deposited Ge2Sb2Te5 films with various thicknesses ranging from 5.8 to 38.9 nm in the photon-energy region 1.5 to 3.1 eV. The measured data of ellipsometric angles (relative amplitude Ψ and phase difference ▵) are compared with the calculated data of ML-EM model with the help of Levenberg-Marquardt (LM) method. The composition depth profiles, including Ge2Sb2Te5, void and Si, are obtained. The dependence of optical constants on the film thickness is attributed to the various distributions of the compositions in the film.
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Wei Qiang, Wei Qiang, Yang Cao, Yang Cao, } "A nondestructive technique of analyzing chalcogenide phase-change thin films by spectroscopic-ellipsometry", Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 602415 (9 December 2005); doi: 10.1117/12.666848; https://doi.org/10.1117/12.666848
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