9 December 2005 Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact
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Proceedings Volume 6024, ICO20: Optical Devices and Instruments; 60242J (2005) https://doi.org/10.1117/12.666966
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
The paper presents results of experimental investigations of electric and photoelectric properties of the diodes, obtained by thermal sputtering of semitransparent Ni layers over monocrystalline wafers of zinc selenide. It was found that parameters of diode structures studied are very similar to those of "ideal" metal-semiconductor contact. Influence of temperature, UV- and x-ray radiation on diode parameters is discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor P. Makhniy, Victor P. Makhniy, Volodymyr V. Mel'nyk, Volodymyr V. Mel'nyk, Peter N. Gorley, Peter N. Gorley, Paul P. Horley, Paul P. Horley, Mykhailo M. Sletov, Mykhailo M. Sletov, Zhuang Zhuo, Zhuang Zhuo, } "Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact", Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 60242J (9 December 2005); doi: 10.1117/12.666966; https://doi.org/10.1117/12.666966

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