23 December 2005 Femtosecond laser pulse induced damage in thin films
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Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60281D (2005) https://doi.org/10.1117/12.667187
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.
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Haiyi Sun, Haiyi Sun, Tianqing Jia, Tianqing Jia, Xiaoxi Li, Xiaoxi Li, Chengbin Li, Chengbin Li, Donghai Feng, Donghai Feng, Shizhen Xu, Shizhen Xu, Zhizhan Xu, Zhizhan Xu, } "Femtosecond laser pulse induced damage in thin films", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60281D (23 December 2005); doi: 10.1117/12.667187; https://doi.org/10.1117/12.667187
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