23 December 2005 Femtosecond laser pulse induced damage in thin films
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Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60281D (2005) https://doi.org/10.1117/12.667187
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haiyi Sun, Haiyi Sun, Tianqing Jia, Tianqing Jia, Xiaoxi Li, Xiaoxi Li, Chengbin Li, Chengbin Li, Donghai Feng, Donghai Feng, Shizhen Xu, Shizhen Xu, Zhizhan Xu, Zhizhan Xu, } "Femtosecond laser pulse induced damage in thin films", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60281D (23 December 2005); doi: 10.1117/12.667187; https://doi.org/10.1117/12.667187

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