23 January 2006 Growth of ZnCdSe semiconductor thin films for opto-electronic applications
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290M (2006) https://doi.org/10.1117/12.667690
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
ZnCdSe thin films were potentio-statically electrodeposited on tin oxide coated conducting substrates using an aqueous acidic bath. The growth conditions were optimized by the cyclic voltametric study. This study shows that alteration of the bath conditions yields any desired composition of this material. The role of the concentration of the various species present was discussed from optical transmittance measurements. It is observed that the concentration of the Cd ion plays a key role in forming the ternary ZnCdSe system. Besides, the initial low concentration of the non-metallic ions is also an essential condition for the alloy formation. The nitrogen ion implantation study indicated a reduction of the sample resistance and a partial annealing effect. The electro-synthesized ZnCdSe thin films were studied by structural, morphological, optical, and transport properties before and after nitrogen ion implantation of various dosage.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Chandramohan, R. Chandramohan, L.-S. Hsu, L.-S. Hsu, S. Thanikaikarasan, S. Thanikaikarasan, M. Raja, M. Raja, K. Kumar, K. Kumar, T. Mahalingam, T. Mahalingam, } "Growth of ZnCdSe semiconductor thin films for opto-electronic applications", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290M (23 January 2006); doi: 10.1117/12.667690; https://doi.org/10.1117/12.667690
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