23 January 2006 The improvement of thick oxidized porous silicon layer growth process
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290S (2006) https://doi.org/10.1117/12.667708
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10mA/cm2 current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O2 pre-oxidizations and high-temperature wet O2 oxidizations process, a high-quality SiO2 30 μm thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.
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Jian Li, Jian Li, Junming An, Junming An, Hongjie Wang, Hongjie Wang, Junlei Xia, Junlei Xia, Dingshan Gao, Dingshan Gao, Xiongwei Hu, Xiongwei Hu, } "The improvement of thick oxidized porous silicon layer growth process", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290S (23 January 2006); doi: 10.1117/12.667708; https://doi.org/10.1117/12.667708
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