23 January 2006 Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290Y (2006) https://doi.org/10.1117/12.667714
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Silicon carbide thin films are prepared by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio under varying negative DC bias voltage. The structural and optical properties of the deposited films are investigated using Fourier transform infrared spectra (FTIR), ultraviolet-visible (UV-VIS) transmission spectra, and scanning electron microscopy (SEM). It is found that by applying the moderate bias on the substrates to accelerate the energetic ions, nanocrystalline silicon carbide can be deposited at lower onset temperature than without bias, and the crystalline grain size of the films is smaller and more uniform. The mechanism about the enhancing effect of the bias is discussed on the performance of positive ions in the plasma.
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Wei Yu, Wei Yu, Wanbing Lu, Wanbing Lu, Chunsheng Wang, Chunsheng Wang, Wenge Ding, Wenge Ding, Guangsheng Fu, Guangsheng Fu, } "Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290Y (23 January 2006); doi: 10.1117/12.667714; https://doi.org/10.1117/12.667714
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