Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD

Jingwei Wang; Yiding Wang; Tao Wang; Shuren Yang; Xiaoting Li; Jingzhi Yin; Xiaofeng Sai; Hongkai Gao

doi:10.1117/12.667720

14 February 2006 Growth and characterization of Ga_xIn_1-xAs_1-ySb_y epitaxial layers grown by LP-MOCVD

Jingwei Wang, Yiding Wang, Tao Wang, Shuren Yang, Xiaoting Li, Jingzhi Yin, Xiaofeng Sai, Hongkai Gao

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 602912 (2006) https://doi.org/10.1117/12.667720
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Epitaxial layers and monolayer of Ga_0.98 In_0.02As_0.24Sb_0.76 quaternary alloys lattice matched to GaSb substrates were grown by our home-made low pressure metal organic chemical vapor deposition (LP-MOCVD). Lattice mis-match (Δa/a~2.5%) between Ga_0.98In_0.02As_0.24Sb_0.76 quaternary alloys and GaSb substrate was obtained. Mirrorlike surface morphologies were investigated by SEM and AFM. Undoped Ga_0.98In_0.02As_0.24Sb_0.76 epitaxial layers grown on semi-insulated GaAs substrates indicates n-type with carrier density of 1.8×10¹⁷cm^-3 and electron mobility of 2551 cm²v^-1 s^-1. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 160 nm. The effects of growth parameters on epitaxial layers were discussed. It is shown that under proper growth conditions, containing growth temperature (570~620°C), V/III ratios (2~6) and flux of carrier gas, smooth and high quality Ga_0.98In_0.02As_0.24Sb_0.76 epitaxial layers can be achieved.

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Jingwei Wang, Yiding Wang, Tao Wang, Shuren Yang, Xiaoting Li, Jingzhi Yin, Xiaofeng Sai, and Hongkai Gao "Growth and characterization of Ga_xIn_1-xAs_1-ySb_y epitaxial layers grown by LP-MOCVD", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602912 (14 February 2006); https://doi.org/10.1117/12.667720

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KEYWORDS

Gallium antimonide

Antimony

Gallium indium arsenide antimonide phosphide

Gallium

Scanning electron microscopy

Chemical species

Crystals

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