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14 February 2006 Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 602912 (2006)
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Epitaxial layers and monolayer of Ga0.98 In0.02As0.24Sb0.76 quaternary alloys lattice matched to GaSb substrates were grown by our home-made low pressure metal organic chemical vapor deposition (LP-MOCVD). Lattice mis-match (Δa/a~2.5%) between Ga0.98In0.02As0.24Sb0.76 quaternary alloys and GaSb substrate was obtained. Mirrorlike surface morphologies were investigated by SEM and AFM. Undoped Ga0.98In0.02As0.24Sb0.76 epitaxial layers grown on semi-insulated GaAs substrates indicates n-type with carrier density of 1.8×1017cm-3 and electron mobility of 2551 cm2v-1 s-1. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 160 nm. The effects of growth parameters on epitaxial layers were discussed. It is shown that under proper growth conditions, containing growth temperature (570~620°C), V/III ratios (2~6) and flux of carrier gas, smooth and high quality Ga0.98In0.02As0.24Sb0.76 epitaxial layers can be achieved.
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Jingwei Wang, Yiding Wang, Tao Wang, Shuren Yang, Xiaoting Li, Jingzhi Yin, Xiaofeng Sai, and Hongkai Gao "Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602912 (14 February 2006);

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