14 February 2006 Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 602912 (2006) https://doi.org/10.1117/12.667720
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Epitaxial layers and monolayer of Ga0.98 In0.02As0.24Sb0.76 quaternary alloys lattice matched to GaSb substrates were grown by our home-made low pressure metal organic chemical vapor deposition (LP-MOCVD). Lattice mis-match (Δa/a~2.5%) between Ga0.98In0.02As0.24Sb0.76 quaternary alloys and GaSb substrate was obtained. Mirrorlike surface morphologies were investigated by SEM and AFM. Undoped Ga0.98In0.02As0.24Sb0.76 epitaxial layers grown on semi-insulated GaAs substrates indicates n-type with carrier density of 1.8×1017cm-3 and electron mobility of 2551 cm2v-1 s-1. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 160 nm. The effects of growth parameters on epitaxial layers were discussed. It is shown that under proper growth conditions, containing growth temperature (570~620°C), V/III ratios (2~6) and flux of carrier gas, smooth and high quality Ga0.98In0.02As0.24Sb0.76 epitaxial layers can be achieved.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingwei Wang, Jingwei Wang, Yiding Wang, Yiding Wang, Tao Wang, Tao Wang, Shuren Yang, Shuren Yang, Xiaoting Li, Xiaoting Li, Jingzhi Yin, Jingzhi Yin, Xiaofeng Sai, Xiaofeng Sai, Hongkai Gao, Hongkai Gao, } "Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602912 (14 February 2006); doi: 10.1117/12.667720; https://doi.org/10.1117/12.667720
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