Hg3In2Te6 material belongs to defect semiconductor group with concentration of stoichiometric vacancies up to 1021cm-3, determining its unusual physical properties. In this paper we present the results proving the possibility to use this material for several types of high-efficient photonic structures, including self-calibrating photodiodes, high-speed photodiodes, multielement photodiodes with improved sensitivity and optical filters for spectral ranges 2-28μm. Performed photoconductivity measurements confirmed high photosensitivity of the material in wide spectral ranges of λ=0.35-1.85 μm, covering spectral sensitivity areas of CdS, CdSe, GaAs, Si and Ge. In comparison with these semiconductors, Hg3In2Te6 has the lowest melting point (983K) making it possible to decrease energy consumption necessary for its synthesis. The experimental results also prove high quantum efficiency of the photoconductivity of Hg3In2Te6 for hν = 0.74 - 3.5 eV. Mercury indium telluride is an ideal material for surface-barrier structures and hetero-junctions, due to low density of surface states and insensitivity to absorption of atmospheric oxygen.