26 January 2006 Low threshold field electron emission of diamond films
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Proceedings Volume 6030, ICO20: Display Devices and Systems; 60300D (2006); doi: 10.1117/12.667369
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Since CVD diamond film possesses desirable properties, it has been widely investigated, and much research has been made in this field. In this experiment, we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition, basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method, through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/μm. And the field emission measurements were carried out at a pressure of 10-4Pa.
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Lili Liu, Yuxue Xia, Song Chen, Da Lei, Haifeng Zhao, Jingqiu Liang, Mingfei Li, Weibiao Wang, Changzhi Gu, Hong Ji, "Low threshold field electron emission of diamond films", Proc. SPIE 6030, ICO20: Display Devices and Systems, 60300D (26 January 2006); doi: 10.1117/12.667369; https://doi.org/10.1117/12.667369
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KEYWORDS
Diamond

Epitaxy

Silicon

Carbon

Raman spectroscopy

Chemical vapor deposition

Silicon films

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