Translator Disclaimer
7 February 2006 A study on high isolation RF MEMS switch
Author Affiliations +
Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 60320Q (2006) https://doi.org/10.1117/12.667883
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
A new type of high isolation RF MEMS switch is studied in this paper. The structure of cantilever beam with electrodes Sandwiched between Si and SiO2 layers has been evaluated. The top and bottom dielectric materials separate two conducting electrodes when actuated. Therefore the reliability has been improved greatly. The curves of the cantilever beam and the voltage have been simulated.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lingling Lin, Guoqing Hu, Zonghua Lin, and Wenyan Liu "A study on high isolation RF MEMS switch", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320Q (7 February 2006); https://doi.org/10.1117/12.667883
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top