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1 February 2006 Surface/subsurface observation and removal mechanisms of ground reaction bonded silicon carbide
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Proceedings Volume 6034, ICO20: Optical Design and Fabrication; 60340H (2006)
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Reaction Bonded Silicon Carbide (RBSiC) has long been recognized as a promising material for optical applications because of its unique combination of favorable properties and low-cost fabrication. Grinding of silicon carbide is difficult because of its high hardness and brittleness. Grinding often induces surface and subsurface damage, residual stress and other types of damage, which have great influence on the ceramic components for optical application. In this paper, surface integrity, subsurface damage and material removal mechanisms of RBSiC ground using diamond grinding wheel on creep-feed surface grinding machine are investigated. The surface and subsurface are studied with scanning electron microscopy (SEM) and optical microscopy. The effects of grinding conditions on surface and subsurface damage are discussed. This research links the surface roughness, surface and subsurface cracks to grinding parameters and provides valuable insights into the material removal mechanism and the dependence of grind induced damage on grinding conditions.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wang Yao, Yu-Min Zhang, Jie-cai Han, Yun-long Zhang, Jian-han Zhang, Yu-feng Zhou, and Yuan-yuan Han "Surface/subsurface observation and removal mechanisms of ground reaction bonded silicon carbide", Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 60340H (1 February 2006);

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