1 February 2006 3D photoresist etching simulation using cellular automata
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Proceedings Volume 6034, ICO20: Optical Design and Fabrication; 60340Q (2006) https://doi.org/10.1117/12.668110
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
The two-dimensional (2-D) dynamic cellular automata (CA) model, for the first time, has been successfully extended in three dimensions for the 3-D simulation of photoresist etching process. The 3-D photoresist etching process has been successfully simulated using the 3-D dynamic CA model when some well-known photoresist etch rate distribution functions are adopted. Simulation results indicate that the 3-D dynamic CA model is fast, accurate and stable. This is identified to be critical useful to the device-sized 3-D lithography process simulation of integrated circuits (IC) and Microelectromechanical System (MEMS).
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Zai-Fa Zhou, Zai-Fa Zhou, Qing-An Huang, Qing-An Huang, Wei-Huan Li, Wei-Huan Li, Fei-Peng Da, Fei-Peng Da, Hai-Pin Shen, Hai-Pin Shen, "3D photoresist etching simulation using cellular automata", Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 60340Q (1 February 2006); doi: 10.1117/12.668110; https://doi.org/10.1117/12.668110

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