1 February 2006 Study of CVD SiC thin film for space mirror
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Proceedings Volume 6034, ICO20: Optical Design and Fabrication; 60340X (2006) https://doi.org/10.1117/12.668117
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
The performance of space mirror lied on the properties of the mirror surface material to a great extent. In this paper, the silicon carbide thin film deposited on reaction-bonded silicon carbide (RBSC) space mirror blank was produced by Chemical Vapor Deposition (CVD) process. Some mechanical and physical properties of the SiC thin film were tested because they were important to study ability to work of space mirror. The result of XRD phase analysis indicated that the component of the SiC thin film was β-SiC. The micro hardness of the film was tested. The thickness of SiC thin film was tested using needle touch contour graph. The results showed that the thickness of SiC film was about 20 μm and film was even in the macro scope. The adhesion strength of SiC thin film and RBSC substrate was tested by scratch method and the results showed that was excellent. The residual stress of SiC thin film was tested by X-ray, at the same time; the origin of residual stress and the calculation of thermal stress were discussed. In the room temperature, the residual stress of the SiC film was compressive. After precision grinding, the surface topography and roughness of the SiC thin film was tested by Atomic Force Microscope (AFM). The results showed that the surface of SiC thin film had extremely low surface roughness and high surface form accuracy. The thermal shock resistance of SiC film was fine by tested.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianhan Zhang, Jianhan Zhang, Yumin Zhang, Yumin Zhang, Jiecai Han, Jiecai Han, Xiaodong He, Xiaodong He, } "Study of CVD SiC thin film for space mirror", Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 60340X (1 February 2006); doi: 10.1117/12.668117; https://doi.org/10.1117/12.668117


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