1 February 2006 Optical coatings optimization of semiconductor laser
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Proceedings Volume 6034, ICO20: Optical Design and Fabrication; 603416 (2006) https://doi.org/10.1117/12.668135
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
The characteristics of GaAs-based semiconductor Laser with antireflective and high reflective coatings are studied. The film designs are optimized with programmed software using the film design program for a double-layer scheme. According to the numerical simulations, the different double-layer with proper parameters is coated onto GaAs-based semiconductor Laser. The thickness of double layers is also calculated using the software taking account of antireflective and high reflective coating in the design of double layer film. With the optimized design of double-layer film, the power properties of GaAs-based semiconductor Laser are improved, and the experimental results satisfy the application requirements as semiconductor Laser.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lin Li, Lin Li, Guo-jun Liu, Guo-jun Liu, Peng Lu, Peng Lu, Yong Wang, Yong Wang, Yu-xia Wang, Yu-xia Wang, Xiu-hua Fu, Xiu-hua Fu, Jingchang Zhong, Jingchang Zhong, } "Optical coatings optimization of semiconductor laser", Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 603416 (1 February 2006); doi: 10.1117/12.668135; https://doi.org/10.1117/12.668135

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