Study on preparation technology of GE<sub>x</sub>C<sub>1-x</sub> film on ZnS substrate

Lianhe Dong; Xiuhua Fu; Yu Dong; Yanjun Sun

doi:10.1117/12.668156

1 February 2006 Study on preparation technology of GE_xC_1-x film on ZnS substrate

Lianhe Dong, Xiuhua Fu, Yu Dong, Yanjun Sun

Proceedings Volume 6034, ICO20: Optical Design and Fabrication; 60341J (2006) https://doi.org/10.1117/12.668156
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Inhomogeneous Ge_xC_1-xfilm has been prepared by making use of reactive radio frequency magnetron sputtering method. In 8 ~ 12 μm waveband, average transmission rate after film sedimentation on CVD/ZnS single surface is 79.1%, larger than that before filming at 7.8%. As a result of experiments, when ratio of reaction gas flow rate CH₄/Ar+CH₄changes, refraction ratio of Ge_xC_1-x film varies in range of 2.4 ~ 4.1 according to the difference of component X. It makes design of multilayer films and preparation of wide waveband inhomogeneous films very easy. Factors influence transmission rate of Ge_xC_1-x film, relationship between refraction ratio of film and ratio of reaction gas flow rate, relationship between film sedimentation speed that corresponds to different refraction ratio and ratio of reaction gas flow rate are analyzed and discussed in this paper.

Citation Download Citation

Lianhe Dong, Xiuhua Fu, Yu Dong, and Yanjun Sun "Study on preparation technology of GE_xC_1-x film on ZnS substrate", Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 60341J (1 February 2006); https://doi.org/10.1117/12.668156

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