The potential of silicon carbide for memory applications: bridging the technological gap between data storage and data processing

Sima Dimitrijev

doi:10.1117/12.639390

5 January 2006 The potential of silicon carbide for memory applications: bridging the technological gap between data storage and data processing

Sima Dimitrijev

Author Affiliations +

Proceedings Volume 6035, Microelectronics: Design, Technology, and Packaging II; 603507 (2006) https://doi.org/10.1117/12.639390
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

This paper demonstrates that electronically passivated Si-SiO₂ interface enables the development of memories for both data storage and data processing. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC. The disadvantages of the DRAM cell (1C1T), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.

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Sima Dimitrijev "The potential of silicon carbide for memory applications: bridging the technological gap between data storage and data processing", Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 603507 (5 January 2006); https://doi.org/10.1117/12.639390

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