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5 January 2006 Subthreshold defect generation by intense electron beams in semiconductors for microelectronics
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Conversion of n- into p-conducting silicon by electron bombardment was first observed with subthreshold intense electron beams of 75 keV energy and confirmed later by several groups. These results received attention again in view of microelectronics and nanotechnology with respect to the shorter than optical focusing conditions for electrons. In order to continue these studies with subthreshold defect generation we report on experiments with optical detection of the changes as observed before in silicon together with the changes from n- into p- conductivity. Further interest is in production of very low cost solar cells from conducting polymers like polyacetylene and avoiding chemical methods leading to formation of highly aggressive waste. The near band gap generation of defects by electron irradiation has been detected in optical absorption spectra. We aim to analyze the stability of the generated defects in view of crystal defects or dangling bond generation in the semiconductors.
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M. Ghoranneviss, A. H. Sari, M. H. Hantehzadeh, H. Hora, F. Osman, K. R. Doolan, R. Höpfl, and G. Benstetter "Subthreshold defect generation by intense electron beams in semiconductors for microelectronics", Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60351C (5 January 2006);

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