30 December 2005 A new empirical model for heterojunction phototransistors
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Abstract
A new simplified heterojunction phototransistor (HPT) circuit model is given in this paper. Most of papers use Ebers-Moll model to describe the optical-electrical relations of HPT. Which is a physical based model and must be changed with different device structure. In this paper, an empirical model is employed. This model mainly formed by three parts: the photo current (Iph), base current (Ib) and collector current(Ic). A dependent current source is used to model the photo current between the collector and base. The photo current can be different from different optical power. Ib are depend on base-emitter voltage while Ic is a function of collector-emitter voltage, Ib and Iph. Contrast with the Ebers-moll model, the empirical model greatly reduced the complexity of the circuit. The model parameters are extracted on measured Ic-Vce and gummel plots. Then, dates in some documents were used to test the empirical model. There is a good agreement with the measured results.
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Hongwei Liu, Pingjuan Niu, Weilian Guo, "A new empirical model for heterojunction phototransistors", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603711 (30 December 2005); doi: 10.1117/12.638694; https://doi.org/10.1117/12.638694
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