3 January 2006 Effect of a buffer layer on the photovoltaic properties of AZO/Cu2O solar cells
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Abstract
The effect of a buffer layer and/or interface region on the photovoltaic properties of Al-doped ZnO (AZO)/Cu2O heterojunction solar cells was investigated. The I-V characteristics and photovoltaic properties in AZO/ZnO-In2O3/Cu2O devices were considerably improved by increasing the Zn content (Zn/(In+Zn atomic ratio)) of the ZnO-In2O3 thin-film buffer layer. In addition, the photovoltaic properties of AZO/Zn1-XMgXO/Cu2O devices were found to degrade significantly as the composition (X) was increased above approximately 0.1 because of the increase in resistivity of the buffer layer. Although the spectral response of photocurrent observed in AZO/Zn1-XMgXO/Cu2O devices was considerably affected by altering the value of X, the photo-generated hole in the buffer layer of these devices was not successfully injected into the Cu2O. AZO/Cu2O heterojunctions fabricated using Cu2O sheets with a sulfurized surface exhibited ohmic I-V characteristics.
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Toshihiro Miyata, Toshihiro Miyata, Tadatsugu Minami, Tadatsugu Minami, Hideki Tanaka, Hideki Tanaka, Horotoshi Sato, Horotoshi Sato, } "Effect of a buffer layer on the photovoltaic properties of AZO/Cu2O solar cells", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603712 (3 January 2006); doi: 10.1117/12.638649; https://doi.org/10.1117/12.638649
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