Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications

Mukesh Kumar; Rajkumar Rajkumar; Dinesh Kumar

doi:10.1117/12.638332

3 January 2006 Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications

Mukesh Kumar, Rajkumar Rajkumar, Dinesh Kumar

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371E (2006) https://doi.org/10.1117/12.638332
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

For this study, Ti/Si and Ta/Si structures were implanted with two doses of nitrogen 10¹⁵ ions/cm² (low dose) and 10¹⁷ ions/cm² (high dose) at 10KeV and 20KeV energy. Characterization was performed by Sheet resistance measurement and X-Ray diffraction (XRD) techniques. Results shows that implantation of 10¹⁵ ions/cm² dose of nitrogen does not cause any nitridation, while in case of high dose implanted samples formation of tantalum nitride phase was observed. Nitride layers formed this way was used as diffusion barrier layers for copper metallization in Silicon based integrated circuits.

Citation Download Citation

Mukesh Kumar, Rajkumar Rajkumar, and Dinesh Kumar "Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371E (3 January 2006); https://doi.org/10.1117/12.638332

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