I-V response of a two-terminal nanodevice using tight-binding theory

A. Alexopoulos

doi:10.1117/12.638151

Translator Disclaimer

29 December 2005 I-V response of a two-terminal nanodevice using tight-binding theory

A. Alexopoulos

Author Affiliations +

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371I (2005) https://doi.org/10.1117/12.638151
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

We present a theoretical model for an atomic diode made up of two one-dimensional semi-infinite linear arrays which are separated by a distance d on a surface substrate. By the use of one-dimensional Green's functions we obtain the local density of states (LDOS) of the system for the continuum limit appropriate to metallic adsorbates and the tight-binding model appropriate to semiconductor adsorbates. The I-V characteristics are studied in the limit of a weakly coupling perturbation between the linear arrays of atoms as well as the limit where the inter-array potential is strongly influenced by an electric field. The latter means that there is strong dependence of the tunneling amplitudes on the applied field which are calculated using suitably modified transfer matrix method.

Citation Download Citation

A. Alexopoulos "I-V response of a two-terminal nanodevice using tight-binding theory", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371I (29 December 2005); https://doi.org/10.1117/12.638151

ACCESS THE FULL ARTICLE