18 January 2006 Organic quantum well light-emitting diodes
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This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Chan, J. Chan, Albert W. Lu, Albert W. Lu, Alan Man Ching Ng, Alan Man Ching Ng, A. B. Djurišić, A. B. Djurišić, Aleksander D. Rakić, Aleksander D. Rakić, "Organic quantum well light-emitting diodes", Proc. SPIE 6038, Photonics: Design, Technology, and Packaging II, 60381M (18 January 2006); doi: 10.1117/12.638370; https://doi.org/10.1117/12.638370

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