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21 March 2006 A hybrid micro-accelerometer system with CMOS readout circuit and self-test function
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Proceedings Volume 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials; 604004 (2006) https://doi.org/10.1117/12.664131
Event: ICMIT 2005: Merchatronics, MEMS, and Smart Materials, 2005, Chongqing, China
Abstract
A hybrid two-chip micro-accelerometer system consisting of a novel lateral capacitive silicon micro-acceleration sensor and a CMOS readout circuit is presented. The micro-acceleration sensor has a proof mass with the size of 0.6×2.4×0.1mm3, the mass of 380 μg and the capacitive gap of 6μm, fabricated by deep reactive ion etching (DRIE) and anodic bonding, using three masks. The CMOS readout circuit with a dynamic range of 75dB, a measured capacitive sensitivity of 10.7V/pF, can offer a self-test voltage of 7V by utilizing a charge pump circuit. The hybrid-integrated system with power supply of DC5V has a measured sensitivity of 18mV/g, 1KHz frequency bandwidth and nonlinearity of 0.18% within the measured range of 50g.
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Weiping Chen, Hong Chen, Xiaowei Liu, and Xiaoyun Tan "A hybrid micro-accelerometer system with CMOS readout circuit and self-test function", Proc. SPIE 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials, 604004 (21 March 2006); doi: 10.1117/12.664131; https://doi.org/10.1117/12.664131
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