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21 March 2006 Dependence of luminous efficiency of OLEDS doped rare earth ions on applied voltage
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Proceedings Volume 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials; 60402E (2006) https://doi.org/10.1117/12.664262
Event: ICMIT 2005: Merchatronics, MEMS, and Smart Materials, 2005, Chongqing, China
Abstract
In this paper, a disorder hopping model was improved from analysis of the quantum size effect and interface effect of organic diodes doped with rare earth ions. The microscopic mechanism associated with the applied voltage influences on the recombination efficiency and the luminous efficiency of rare earth ions-doped OLEDs was investigated. The dependence of recombination efficiency and luminous efficiency on applied voltage varies with rare earth ions such as Nd, Eu and Er. Recombination efficiency, and then luminous efficiency increases first, and then reaches a maximum at a certain applied voltage. Then it decreases slowly. Maximum recombination efficiency, and then maximum luminous efficiency vary with rare earth ions. The corresponding voltage varies with rare earth ions also. The relation between recombination efficency and luminous efficency was studied. The results of this study agree closely with other studies cited herein.
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J. Liu, Xi M. Chen, Y. Liu, and Chang K. Duan "Dependence of luminous efficiency of OLEDS doped rare earth ions on applied voltage", Proc. SPIE 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials, 60402E (21 March 2006); https://doi.org/10.1117/12.664262
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