10 February 2006 Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces
Author Affiliations +
Proceedings Volume 6046, Fifth Symposium Optics in Industry; 60460Z (2006) https://doi.org/10.1117/12.674473
Event: Fifth Symposium Optics in Industry, 2005, Santiago De Queretaro, Mexico
Abstract
The optical anisotropy of a semiconductor surface can have different origins, such as, local-field effects, the electro-optics effect, reconstruction, surface dislocations, and surface roughness. A comprehensive, quantitative picture on how these effects are related to surface optical anisotropies (SOA) can now be obtained thanks to the progress in the modeling of optical properties of surfaces. Linear optical spectra can now be calculated very accurately even for large and complex surface structures. This allows a much better understanding of the origin of specific SOA. In this paper we make a review focused on the microscopic origin of SOA and the present state of the art in the study of reflectance anisotropy spectroscopy of semiconductor surfaces.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. A. Vázquez-Nava, R. A. Vázquez-Nava, N. Arzate, N. Arzate, B. S. Mendoza, B. S. Mendoza, } "Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces", Proc. SPIE 6046, Fifth Symposium Optics in Industry, 60460Z (10 February 2006); doi: 10.1117/12.674473; https://doi.org/10.1117/12.674473
PROCEEDINGS
12 PAGES


SHARE
Back to Top