Nitride semiconductors for blue lasers (Invited Paper)

Takashi Matsuoka

doi:10.1117/12.659862

5 December 2005 Nitride semiconductors for blue lasers (Invited Paper)

Takashi Matsuoka

Proceedings Volume 6050, Optomechatronic Micro/Nano Devices and Components; 60500K (2005) https://doi.org/10.1117/12.659862
Event: Optomechatronic Technologies 2005, 2005, Sapporo, Japan

Abstract

Nitride-semiconductor technologies for blue lasers are reviewed. Nitride semiconductors from GaN to InN are covered with respect to MOVPE growth and characteristics. For GaN, two-step growth significantly improves crystalline characteristics, such as the concentration of residual carriers, mobility, and surface morphology. For InGaN, a key material for the emitting layer of blue lasers, the use of nitrogen as the carrier and bubbling gases for metalorganic sources enhances indium incorporation, and composition control has been achieved. The phase separation of InGaAlN system has been semiempirically predicted using the strictly regular solution model. As substrates for the epitaxial growth, a several materials are discussed along with the affect of the substrate polarity on the characteristics of epitaxially grown GaN. P- and n-type doping are also briefly examined. Looking at future prospects for blue lasers, the effect of polarization in device structures and the bulk-crystal growth for substrates are described.

Citation Download Citation

Takashi Matsuoka "Nitride semiconductors for blue lasers (Invited Paper)", Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 60500K (5 December 2005); https://doi.org/10.1117/12.659862

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