Low temperature bonding of LiNbO<sub>3</sub> waveguide chips to Si substrates in air

Ryo Takigawa; Eiji Higurashi; Tadatomo Suga; Satoshi Shinada; Tetsuya Kawanishi

doi:10.1117/12.653072

6 December 2005 Low temperature bonding of LiNbO₃ waveguide chips to Si substrates in air

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

Proceedings Volume 6050, Optomechatronic Micro/Nano Devices and Components; 605012 (2005) https://doi.org/10.1117/12.653072
Event: Optomechatronic Technologies 2005, 2005, Sapporo, Japan

Abstract

This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO₃chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO₃ chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.

Citation Download Citation

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, and Tetsuya Kawanishi "Low temperature bonding of LiNbO₃ waveguide chips to Si substrates in air", Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 605012 (6 December 2005); https://doi.org/10.1117/12.653072

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