6 February 2006 CMOS image sensor with organic photoconductive layer having narrow absorption band and proposal of stack type solid-state image sensors
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Abstract
Digital still cameras overtook film cameras in Japanese market in 2000 in terms of sales volume owing to their versatile functions. However, the image-capturing capabilities such as sensitivity and latitude of color films are still superior to those of digital image sensors. In this paper, we attribute the cause for the high performance of color films to their multi-layered structure, and propose the solid-state image sensors with stacked organic photoconductive layers having narrow absorption bands on CMOS read-out circuits.
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Shunji Takada, Mikio Ihama, Masafumi Inuiya, "CMOS image sensor with organic photoconductive layer having narrow absorption band and proposal of stack type solid-state image sensors", Proc. SPIE 6068, Sensors, Cameras, and Systems for Scientific/Industrial Applications VII, 60680A (6 February 2006); doi: 10.1117/12.642582; https://doi.org/10.1117/12.642582
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