28 February 2006 Optically pumped semiconductor lasers at 505 nm in the power range above 100 mW
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Abstract
Lasers based on optically pumped semiconductors (OPS) offer unique capabilities in both wavelength tailoring and power scaling compared to traditional solid-state lasers. In particular, these lasers can be designed in wavelength to realize for instance 505nm, which enables excitation of two fluorescent dye chemistry sets originally established by 488 and 514 nm legacy argon lasers. Highly efficient intra cavity frequency doubling of an 1010nm OPS yields over 100 mW of output power at 505 nm. In this paper we will present a brief background on OPS technology. We will then discuss specifics of the 505 nm laser and present both performance and reliability data for this laser.
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Wolf Seelert, Wolf Seelert, Stefan Kubasiak, Stefan Kubasiak, Johannes Negendank, Johannes Negendank, R. von Elm, R. von Elm, Juan Chilla, Juan Chilla, Hailong Zhou, Hailong Zhou, Eli Weiss, Eli Weiss, } "Optically pumped semiconductor lasers at 505 nm in the power range above 100 mW", Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 610002 (28 February 2006); doi: 10.1117/12.659286; https://doi.org/10.1117/12.659286
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