High-performance high-reliability 880-nm diode laser bars and fiber-array packages

M. Fouksman; S. Lehconen; J. Haapamaa; K. Kennedy; J. Li

doi:10.1117/12.659897

15 February 2006 High-performance high-reliability 880-nm diode laser bars and fiber-array packages

M. Fouksman, S. Lehconen, J. Haapamaa, K. Kennedy, J. Li

Proceedings Volume 6104, High-Power Diode Laser Technology and Applications IV; 61040A (2006) https://doi.org/10.1117/12.659897
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

The 880 nm diode laser is emerging as the source of choice for pumping Nd:YV0₄ laser crystals because it offers higher pumping efficiency than 808 nm diode lasers[1]. This paper reports on recent progress in the development of high power, high reliability, 880 nm laser bars. Specifically, high performance has been achieved based on Coherent's aluminum-free active (AAA) epitaxial structures while maintaining lifetimes greater than 10,000 hours. This includes 30% fill factor, 1 cm bars on conductively cooled packages (CCP) operating at 51 W with proven manufacturability. We observed power conversion efficiency (PCE) of up to 56%. These lasers have a far field fast axis divergence of 32° (FWHM), and slow axis divergence of <7° (FWHM). Typical value of the FWHM of output spectrum is 2.5 nm. These bars were used to build fiber array packages (FAPs) operating at 45 W. We have achieved FAP PCE of 50% and numerical aperture of <0.12. Reliability of both bars and FAP was shown to exceed 10000h MTBF.

Citation Download Citation

M. Fouksman, S. Lehconen, J. Haapamaa, K. Kennedy, and J. Li "High-performance high-reliability 880-nm diode laser bars and fiber-array packages", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040A (15 February 2006); https://doi.org/10.1117/12.659897

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KEYWORDS

Reliability

Semiconductor lasers

Fiber lasers

Manufacturing

High power lasers

Laser crystals

Diode pumped solid state lasers

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