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15 February 2006 Successive phase change and stability of near-field patterns for broad-area laser diodes
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Abstract
For the application of broad-area laser diodes (BA-LDs) to display or printing, uniform distribution and stability of their near-field pattern (NFP) are the most important demand. In order to control the NFP, we have fabricated BA-LDs with index-guided structure and got better top-hat and stabler NFP than that for gain-guided BA-LDs. However, this mechanism is not understood yet. Therefore, we study the features of BA-LDs' NFP systematically, and set up a new model to understand their behaviors. The NFPs of BA-LDs evolve via three phases with increasing operation current: the first phase is "mode-progressing phase" in which the number of the spatial modes increases orderly, and the second phase is "transition phase" in which the spatial modes become unstable and fluctuate. The third phase has different properties according to the waveguiding structure of BA-LDs: "disordered phase" appears for gain-guided structure in which several specific modes dominate in the whole distribution (filamentation behavior), on the other hand "ordered phase" appears in the case of index-guided structure in which a top-hat distribution is obtained. This top-hat NFP is almost unchanged with increasing output power. With these experimental results, we propose the new model, in which the emitting area of a BA-LD is divided into several parts and they are discussed separately.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsunenori Asatsuma, Yoshiro Takiguchi, Sebastien Frederico, Akio Furukawa, and Shoji Hirata "Successive phase change and stability of near-field patterns for broad-area laser diodes", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040C (15 February 2006); https://doi.org/10.1117/12.644470
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