15 February 2006 Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers
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Proceedings Volume 6104, High-Power Diode Laser Technology and Applications IV; 61040F (2006); doi: 10.1117/12.643781
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States
Abstract
We report on the development of a new generation of very high power 980 nm single lateral mode ridge-waveguide quantum-well lasers. An asymmetric-waveguides vertical structure has been optimized for very low internal losses while keeping the vertical mode-size large, thus allowing a low vertical far-field beam angle of less than 19°. Careful optimization of the doping profiles, and epitaxial interfaces optimization for reduced scattering, allowed to obtain internal losses as low as 0.6-0.7 cm-1. Such low losses are necessary to keep the external efficiency high in very long cavities, together with a high internal quantum efficiency. We thus reached our goal of keeping the external efficiency above 70% even for cavity lengths of 4.5 mm. The flared ridge waveguide has been designed to strongly filter higher order lateral modes, and kink-free operation has been obtained up to over 1.5 W output power, with very stable vertical and horizontal beam patterns. High saturation powers above 2 W have also been demonstrated at 25°C, and over 1.5 W at 75°C. Wavelength stabilized chips, by means of a fiber Bragg grating, reached linear fiber powers above 1.0 W with strong suppression of gain-peak lasing at all currents and good power stability.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Bettiati, C. Starck, F. Laruelle, V. Cargemel, P. Pagnod, P. Garabedian, D. Keller, G. Ughetto, J-C. Bertreux, L. Raymond, G. Gelly, R-M. Capella, "Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040F (15 February 2006); doi: 10.1117/12.643781; https://doi.org/10.1117/12.643781
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KEYWORDS
High power lasers

Fiber Bragg gratings

Internal quantum efficiency

Semiconductor lasers

Doping

Laser applications

Laser marking

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