1 March 2006 A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates
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Abstract
We have previously shown that location-controlled single-crystal regions can be obtained by implementing a version of the sequential lateral solidification process referred to as dot-SLS. Performed on an amorphous Si precursor, however, the process results in regions having an apparently random surface crystal-orientation distribution that may negatively impact the uniformity of resulting devices. In this paper, we demonstrate one approach to control the surface orientation of dot-SLS processed regions. We accomplish this in a simple manner by performing the process on textured polycrystalline Si precursor films that were, in turn, obtained using laser processing of as-deposited amorphous Si films. This hybrid approach is possible and effective because the dot-SLS process allows for preserving the original texture of the "seed" crystals, while successfully removing all random high-angle grain boundaries within the laterally solidified regions. We identify and utilize two specific and well-known laser-processing techniques for obtaining highly (100) or (111) surface textured polycrystalline Si films. The results from dot-SLS experiments performed on (100) textured films- obtained through "mixed-phase" zone-melting recrystallization using a continuous-wave laser - were found to be particularly significant as the growth from {100} surface-oriented seeds resulted in single-crystal regions that were predominantly free of any planar defects.
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P. C. van der Wilt, P. C. van der Wilt, B. A. Turk, B. A. Turk, A. B. Limanov, A. B. Limanov, A. M. Chitu, A. M. Chitu, James S. Im, James S. Im, } "A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates", Proc. SPIE 6106, Photon Processing in Microelectronics and Photonics V, 61060B (1 March 2006); doi: 10.1117/12.651139; https://doi.org/10.1117/12.651139
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