28 February 2006 Silicon flip-chip imaging with a resolution of 325-nm using solid-immersion lenses and the two-photon optical-beam induced current method
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Abstract
This paper reports the imaging of a silicon flip-chip with high resolution by detection of the photocurrent generated by the two-photon absorption of 1530nm light from a femtosecond Er:fiber laser. High resolution imaging was made possible by the inclusion of a silicon solid immersion lens, which increased the numerical aperture of the microscope. Using this technique, features on a sub-micron scale are clearly resolvable with excellent contrast, and the resolution of the system was found to be 325nm.
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Euan Ramsay, Nicholas Pleynet, Dong Xiao, Richard J. Warburton, Derryck T. Reid, "Silicon flip-chip imaging with a resolution of 325-nm using solid-immersion lenses and the two-photon optical-beam induced current method", Proc. SPIE 6108, Commercial and Biomedical Applications of Ultrafast Lasers VI, 61080G (28 February 2006); doi: 10.1117/12.645629; https://doi.org/10.1117/12.645629
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