28 February 2006 Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation
Author Affiliations +
Abstract
We report the use of electric field induced second harmonic generation to probe electrical signals in a CMOS chip. The second harmonic of incident 2.3μm illumination provided by a femtosecond optical parametric oscillator was measured and shown to depend quadratically on both optical intensity and on the applied DC electric field. By using a near infrared photomultiplier tube it was possible to monitor directly the electrical waveform in the chip on the oscilloscope.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Xiao, Euan Ramsay, Bernd Offenbeck, Norbert Weber, Derryck T. Reid, "Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation", Proc. SPIE 6108, Commercial and Biomedical Applications of Ultrafast Lasers VI, 61080H (28 February 2006); doi: 10.1117/12.645640; https://doi.org/10.1117/12.645640
PROCEEDINGS
7 PAGES


SHARE
Back to Top