Fabrication of 3D photonic crystals by two-step dry etching of layered media

Pradeep Srinivasan; Raymond C. Rumpf; Eric G. Johnson

doi:10.1117/12.646461

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23 January 2006 Fabrication of 3D photonic crystals by two-step dry etching of layered media

Pradeep Srinivasan, Raymond C. Rumpf, Eric G. Johnson

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Proceedings Volume 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV; 611006 (2006) https://doi.org/10.1117/12.646461
Event: MOEMS-MEMS 2006 Micro and Nanofabrication, 2006, San Jose, California, United States

Abstract

Photonic crystals have received growing interest over the past decade on account of their excellent functionality to guiding and manipulating electromagnetic radiation and their diverse applications. Our approach to fabricate crystals is by a two step etching process in a semiconductor hetero-structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) grown using molecular beam epitaxy (MBE). An array of holes was dry etched in Cl₂/Ar inductively coupled plasma. Etching selectivity between the mask and the substrate was 10:1.2 By using SF₆ in addition to the boron-tri-chloride (BCl₃) chemistry, the GaAs is etched selectively over the AlGaAs with selectivities over 5:1. Thus a robust two-step etching process has been developed based entirely on dry etching

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Pradeep Srinivasan, Raymond C. Rumpf, and Eric G. Johnson "Fabrication of 3D photonic crystals by two-step dry etching of layered media", Proc. SPIE 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV, 611006 (23 January 2006); https://doi.org/10.1117/12.646461

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