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5 January 2006 Novel combined low-coherence interferometry spectrally resolved reflectometry compatible with high-resolution Raman spectroscopy for nondestructive characterization of MEMS structures
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Abstract
We presented novel tool employing both low coherence interferometer, and spectrally resolved reflectometer sensor. We discuss compatibility of this metrology with high resolution Raman spectroscopy. We present measurements of the stability of the Raman spectrometer indicating that system is capable to measure stress in silicon with reproducibility corresponding to 1 MPa and below. We propose integrated tool for simultaneous measurement of stress and displacement of the micro-machined electromechanical devices. Furthermore we propose Raman system configuration allowing measurement of all independent stress tensor components on submicron scale.
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Wojciech J. Walecki, Talal Azfar, Alexander Pravdivstev, Manuel Santos II, Tim Wong, Aiguo Feng, and Ann Koo "Novel combined low-coherence interferometry spectrally resolved reflectometry compatible with high-resolution Raman spectroscopy for nondestructive characterization of MEMS structures", Proc. SPIE 6111, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V, 61110M (5 January 2006); https://doi.org/10.1117/12.645560
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