Analysis of surface-normal coupled-quantum-well modulator at 1.55 um

Z. Q. Li; Alfred K. M. Lam; Z. Simon Li

doi:10.1117/12.646385

28 February 2006 Analysis of a surface-normal coupled-quantum-well modulator at 1.55 um

Z. Q. Li, Alfred K. M. Lam, Z. Simon Li

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 611508 (2006) https://doi.org/10.1117/12.646385
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report on the design and analysis of a surface-normal coupled-quantum-well (CQW) electro-absorption modulator (EAM) using a simulation software APSYS. The modulator is designed as a p-i-n diode operating at 1.55 um, in which the CQW structure is composed of InGaAs-InAlAs. In this paper, detailed analysis of the internal device physics is investigated, which includes the transition energy and the square of the normalized overlap integrals between confined energy levels for electrons and holes. This analysis reveals the mechanisms in the device that are responsible for the redshift of the absorption spectra for achieving an operating wavelength at 1.55 um, which, in turn, provides researchers with insight in the high performance modulators design. The analysis also explains the dependence of the absorption spectra on wavelength and bias voltage. The simulation model self-consistently solves for wavefunctions and the corresponding quantum states energies and then used for absorption spectra calculations within the 2D/3D drift-diffusion framework.

Citation Download Citation

Z. Q. Li, Alfred K. M. Lam, and Z. Simon Li "Analysis of a surface-normal coupled-quantum-well modulator at 1.55 um", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611508 (28 February 2006); https://doi.org/10.1117/12.646385

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KEYWORDS

Modulators

Absorption

Electrons

Quantum wells

Analytical research

Physics

Diodes

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