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28 February 2006 Analysis of a surface-normal coupled-quantum-well modulator at 1.55 um
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We report on the design and analysis of a surface-normal coupled-quantum-well (CQW) electro-absorption modulator (EAM) using a simulation software APSYS. The modulator is designed as a p-i-n diode operating at 1.55 um, in which the CQW structure is composed of InGaAs-InAlAs. In this paper, detailed analysis of the internal device physics is investigated, which includes the transition energy and the square of the normalized overlap integrals between confined energy levels for electrons and holes. This analysis reveals the mechanisms in the device that are responsible for the redshift of the absorption spectra for achieving an operating wavelength at 1.55 um, which, in turn, provides researchers with insight in the high performance modulators design. The analysis also explains the dependence of the absorption spectra on wavelength and bias voltage. The simulation model self-consistently solves for wavefunctions and the corresponding quantum states energies and then used for absorption spectra calculations within the 2D/3D drift-diffusion framework.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Q. Li, Alfred K. M. Lam, and Z. Simon Li "Analysis of a surface-normal coupled-quantum-well modulator at 1.55 um", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611508 (28 February 2006);


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