28 February 2006 Nonequilibrium theory for semiconductor laser systems
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Abstract
A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution. The gain spectrum, however, does not show spectrally narrow hole burning but a reduction over a wide range of frequencies compared to the equilibrium gain because of the large homogeneous broadening in the high density lasing system.
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A. Thränhardt, A. Thränhardt, S. Becker, S. Becker, C. Schlichenmaier, C. Schlichenmaier, I. Kuznetsova, I. Kuznetsova, S. W. Koch, S. W. Koch, J. Hader, J. Hader, J. V. Moloney, J. V. Moloney, W. W. Chow, W. W. Chow, } "Nonequilibrium theory for semiconductor laser systems", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61150W (28 February 2006); doi: 10.1117/12.661349; https://doi.org/10.1117/12.661349
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