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28 February 2006 Differential luminescence thermometry in semiconductor laser cooling
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Abstract
We demonstrate a non-contact, spectroscopic technique to measure the temperature change of semiconductors with very high precision. A temperature resolution of less than 100 μK has been obtained with bulk GaAs. This scheme finds application in experiments to study laser cooling of solids. We measure a record external quantum efficiency of 99% for a GaAs device.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Babak Imangholi, Michael P. Hasselbeck, Daniel A. Bender, Chengao Wang, Mansoor Sheik-Bahae, Richard I. Epstein, and Sarah Kurtz "Differential luminescence thermometry in semiconductor laser cooling", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151C (28 February 2006); https://doi.org/10.1117/12.646346
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