Paper
28 February 2006 Single lateral-mode broad area laser diodes by thermally profiled lateral refractive index: modeling and simulation
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Abstract
We propose and demonstrate theoretically a method of achieving single lateral mode field patterns in CW broad area laser diodes at high power. The method relies on laterally profiling the thermal conductivity of the bonding solder layer and thereby thermally controlling the lateral index. Various configurations are simulated using a split step FFT beam propagation method including thermal, carrier (alpha-parameter) and optical (Kerr effect) index variations. Thermal effects are described using a 2-D finite element electro-thermal model including current spreading.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jayanta Mukherjee and John G. McInerney "Single lateral-mode broad area laser diodes by thermally profiled lateral refractive index: modeling and simulation", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151U (28 February 2006); https://doi.org/10.1117/12.639927
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Cited by 1 scholarly publication.
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KEYWORDS
Broad area laser diodes

Modeling and simulation

Refractive index

Temperature metrology

Continuous wave operation

High power lasers

Optical simulations

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