28 February 2006 Photoluminescence refrigeration in semiconductors
Author Affiliations +
Abstract
A theoretical study of photoluminescence refrigeration in semiconductors has been carried out using a model that takes into account photon recycling and includes the rate equations for both carriers and photons. General expressions for cooling efficiency, cooling power density, and the cooling condition are derived. The investigation of the photoluminescence refrigeration in an intrinsic GaAs slab shows that net cooling is accessible when quantum efficiency and luminescence extraction are high, and that photon recycling contributes strongly to photoluminescence refrigeration when the luminescence extraction efficiency is small.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J.-B. Wang, J.-B. Wang, S. R. Johnson, S. R. Johnson, D. Ding, D. Ding, S.-Q. Yu, S.-Q. Yu, Y.-H. Zhang, Y.-H. Zhang, } "Photoluminescence refrigeration in semiconductors", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61152C (28 February 2006); doi: 10.1117/12.645359; https://doi.org/10.1117/12.645359
PROCEEDINGS
9 PAGES


SHARE
Back to Top