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28 February 2006 All-optical wavelength conversion in a vertical cavity semiconductor switch
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Abstract
Wavelength conversion with high contrast ratio and low OSNR penalty has been achieved by using a resonant vertical-cavity all-optical switch based on saturable absorption in multiple-quantum-wells. The device was grown by MBE on InP substrate. It comprised a 19.5 pairs n+-Ga0.47In0.53As/InP bottom DBR, 28 Ga0.47In0.53As QWs, and a 50% reflective top dielectric mirror. We carried out conversion experiments between a wavelength-tunable modulated pump signal and a CW beam with a wavelength matching the Fabry-Perot resonance of the switch. Using a 622 Mb/s modulated pump with an average power of only 6-dBm we have demonstrated a 15 dB extinction ratio for the converted signal. The wavelength conversion process exhibited a weak dependence on the pump signal wavelength; we have achieved wavelength conversion in a range of 20 nm. BER/OSNR measurements on the wavelength converted data signal indicated a maximum OSNR penalty (at a BER=10-9) of about 2.5 dB, with respect to the input pump data, over the entire conversion range. Error free operation was observed up to 2 Gb/s when device performance degraded due to its long absorption recovery time. However, with further optimization, the device recovery time could be reduced to the picosecond range, extending its application to much higher date rates.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claudio Porzi, Luca Poti D.D.S., Antonella Bogoni, Mircea Guina, and Oleg Okhotnikov "All-optical wavelength conversion in a vertical cavity semiconductor switch", Proc. SPIE 6116, Optical Components and Materials III, 61160P (28 February 2006); https://doi.org/10.1117/12.654385
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