15 February 2006 Sub-picosecond exciton spin-relaxation in GaN
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Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 611803 (2006); doi: 10.1117/12.640263
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States
Abstract
Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T -1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.
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Atsushi Tackeuchi, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji-Hao Liang, Masataka Kajikawa, Naochika Horio, "Sub-picosecond exciton spin-relaxation in GaN", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 611803 (15 February 2006); doi: 10.1117/12.640263; https://doi.org/10.1117/12.640263
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KEYWORDS
Gallium nitride

Excitons

Picosecond phenomena

Finite element methods

Spin polarization

Gallium arsenide

Ultrafast phenomena

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