15 February 2006 Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN
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Abstract
Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5x107 cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2x108 cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.
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K. T. Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff, "Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180D (15 February 2006); doi: 10.1117/12.651190; https://doi.org/10.1117/12.651190
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